- molecular-beam epitaxial growth
- Микроэлектроника: молекулярно-пучковое эпитаксиальное выращивание
Универсальный англо-русский словарь. Академик.ру. 2011.
Универсальный англо-русский словарь. Академик.ру. 2011.
molecular beam epitaxial growth — molekulinis epitaksinis auginimas statusas T sritis radioelektronika atitikmenys: angl. molecular beam epitaxial growth vok. Epitaxialzüchtung durch Molekularstrahl, f rus. эпитаксиальное выращивание методом молекулярного пучка, n pranc.… … Radioelektronikos terminų žodynas
Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… … Wikipedia
Stranski-Krastanov growth — (SK growth, also Stransky Krastanov or Stranski Krastanow) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. Also known as layer plus island growth , the SK mode follows a two step process:… … Wikipedia
Si/SiGe resonant interband tunnel diode — A Si/SiGe resonant interband tunnel diode (RITD) is a type of resonant interband tunnel diodeswhich is based on Si/SiGe materials.All types of tunnel diodes, including Si/SiGe resonant interband tunnel diodes,make use of the quantum mechanical… … Wikipedia
Epitaxialzüchtung durch Molekularstrahl — molekulinis epitaksinis auginimas statusas T sritis radioelektronika atitikmenys: angl. molecular beam epitaxial growth vok. Epitaxialzüchtung durch Molekularstrahl, f rus. эпитаксиальное выращивание методом молекулярного пучка, n pranc.… … Radioelektronikos terminų žodynas
croissance épitaxiale par faisceau moléculaire — molekulinis epitaksinis auginimas statusas T sritis radioelektronika atitikmenys: angl. molecular beam epitaxial growth vok. Epitaxialzüchtung durch Molekularstrahl, f rus. эпитаксиальное выращивание методом молекулярного пучка, n pranc.… … Radioelektronikos terminų žodynas
molekulinis epitaksinis auginimas — statusas T sritis radioelektronika atitikmenys: angl. molecular beam epitaxial growth vok. Epitaxialzüchtung durch Molekularstrahl, f rus. эпитаксиальное выращивание методом молекулярного пучка, n pranc. croissance épitaxiale par faisceau… … Radioelektronikos terminų žodynas
эпитаксиальное выращивание методом молекулярного пучка — molekulinis epitaksinis auginimas statusas T sritis radioelektronika atitikmenys: angl. molecular beam epitaxial growth vok. Epitaxialzüchtung durch Molekularstrahl, f rus. эпитаксиальное выращивание методом молекулярного пучка, n pranc.… … Radioelektronikos terminų žodynas
materials science — the study of the characteristics and uses of various materials, as glass, plastics, and metals. [1960 65] * * * Study of the properties of solid materials and how those properties are determined by the material s composition and structure, both… … Universalium
Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which … Wikipedia
epitaxy — /ep i tak see/, n., pl. epitaxies. Crystall. epitaxis. * * * ▪ crystallography the process of growing a crystal of a particular orientation on top of another crystal, where the orientation is determined by the underlying crystal. The… … Universalium